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RF FETs MRF6522-10R1
NXP
MRF6522-10R1
--
Diodes, Transistors and Thyristors
RF FETs
MRF6522-10R1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width3.81(Max)
Package Height2.95(Max)
Package Length4.83(Max)
Output Power (W)10
Supplier PackageNI-200Z
Maximum IDSS (uA)1
Mode of OperationClass AB
Maximum Frequency (MHz)960
Typical Power Gain (dB)17
Number of Elements per Chip1
Typical Drain Efficiency (%)50
Maximum Power Dissipation (mW)29000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)17@26V
Typical Output Capacitance @ Vds (pF)10@26V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)0.9@26V
Description
Trans RF MOSFET N-CH 65V 3-Pin NI-200Z T/R
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