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MRF6S21060NBR1
MRF6S21060NBR1
RF FETs MRF6S21060NBR1
NXP
MRF6S21060NBR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle Dual Drain Dual Gate
Package Width9.07(Max)
Package Height2.64(Max)
Package Length23.67(Max)
Output Power (W)60
Supplier PackageTO-272 W
Mode of Operation2-Carrier W-CDMA|CDMA|TDMA
Standard Package NameTO-272 W
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)2170
Minimum Frequency (MHz)2110
Typical Power Gain (dB)15.5
Number of Elements per Chip1
Typical Drain Efficiency (%)26
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)68
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Reverse Transfer Capacitance @ Vds (pF)1.5@28V
Description
Trans RF FET N-CH 68V 5-Pin TO-272 W T/R
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