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MRF6V12250HR5
MRF6V12250HR5
RF FETs MRF6V12250HR5
NXP
MRF6V12250HR5
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.32(Max)
Package Length34.16(Max)
Output Power (W)275(Typ)
Supplier PackageCase 465-06
Process TechnologyLDMOS
Maximum Frequency (MHz)1215
Minimum Frequency (MHz)960
Typical Power Gain (dB)20.3
Number of Elements per Chip1
Typical Drain Efficiency (%)65.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)100
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Output Capacitance @ Vds (pF)352@50V
Typical Reverse Transfer Capacitance @ Vds (pF)0.46@50V
Description
Trans RF MOSFET N-CH 100V 3-Pin Case 465-06 T/R
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