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MRFE6S9125NR1
MRFE6S9125NR1
RF FETs MRFE6S9125NR1
NXP
MRFE6S9125NR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle Dual Drain Dual Gate
Package Width9.07(Max)
Package Height2.64(Max)
Package Length17.58(Max)
Output Power (W)125
Supplier PackageTO-270 W
Mode of Operation1-Carrier N-CDMA|GSM|GSM EDGE
Process TechnologyLDMOS
Standard Package NameTO-270 W
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1000
Typical Power Gain (dB)19|20|20.2
Number of Elements per Chip1
Typical Drain Efficiency (%)62
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)66
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)350@28V
Typical Output Capacitance @ Vds (pF)64@28V
Typical Reverse Transfer Capacitance @ Vds (pF)1.9@28V
Description
Trans RF MOSFET N-CH 66V 5-Pin TO-270 W T/R
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