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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BG5412KH6327XTSA1
BG5412KH6327XTSA1
RF FETs BG5412KH6327XTSA1
Infineon
BG5412KH6327XTSA1
--
Diodes, Transistors and Thyristors
RF FETs
BG5412KH6327XTSA1.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationDual Common Source
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-363
Standard Package NameSOT-26
Typical Power Gain (dB)31@Amp B|34@Amp A
Number of Elements per Chip2
Maximum Power Dissipation (mW)200
Maximum Gate Source Voltage (V)±6
Maximum Drain Source Voltage (V)8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.025
Typical Forward Transconductance (S)0.03@Amp B|0.033@Amp A
Typical Input Capacitance @ Vds (pF)2@5V@Gate 1@Amp B|2.2@5V@Gate 1@Amp A
Typical Output Capacitance @ Vds (pF)0.8@5V@Amp B|0.9@5V@Amp A
Description
Trans RF MOSFET N-CH 8V 0.025A Automotive 6-Pin SOT-363 T/R
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