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MRFE8VP8600HR5
MRFE8VP8600HR5
RF FETs MRFE8VP8600HR5
NXP
MRFE8VP8600HR5
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height4.83(Max)
Package Length41.28(Max)
Output Power (W)140(Typ)
Supplier PackageNI-1230H
Maximum IDSS (uA)20
Mode of OperationOFDM
Process TechnologyLDMOS
Maximum Frequency (MHz)860
Minimum Frequency (MHz)470
Typical Power Gain (dB)21
Number of Elements per Chip2
Typical Drain Efficiency (%)30
Maximum Power Dissipation (mW)1250000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)115
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)19.4
Typical Input Capacitance @ Vds (pF)452@50V
Typical Output Capacitance @ Vds (pF)71.2@50V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)1.62@50V
Description
Trans RF MOSFET N-CH 115V 5-Pin NI-1230H T/R
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