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MRFX1K80H-128MHZ
MRFX1K80H-128MHZ
RF FETs MRFX1K80H-128MHZ
NXP
MRFX1K80H-128MHZ
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
HTS8473.30.11.80
PPAPNo
TypeMOSFET
EU RoHSCompliant
MountingScrew
ECCN (US)3B992
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
Package Width10.29(Max)
Package Height4.83(Max)
Package Length41.28(Max)
Output Power (W)1800(Typ)
Supplier PackageNI-1230H
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)400
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)25.1
Typical Drain Efficiency (%)75.1
Maximum Power Dissipation (mW)2247000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)179
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)44.7
Typical Input Capacitance @ Vds (pF)760@65V
Typical Output Capacitance @ Vds (pF)203@65V
Typical Reverse Transfer Capacitance @ Vds (pF)2.9@65V
Description
Trans RF MOSFET N-CH 179V 5-Pin NI-1230H
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