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AFT31150N
AFT31150N
RF FETs AFT31150N
NXP
AFT31150N
--
Diodes, Transistors and Thyristors
RF FETs
AFT31150N.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeMOSFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width10.01(Max)
Package Height3.86(Max)
Package Length20.62(Max)
Output Power (W)150(Typ)
Supplier PackageOM-780 EP
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)3100
Minimum Frequency (MHz)2700
Typical Power Gain (dB)17
Number of Elements per Chip1
Typical Drain Efficiency (%)50
Maximum Power Dissipation (mW)741000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Description
Trans RF FET N-CH 65V 3-Pin OM-780 EP T/R
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