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PD54008L-E
PD54008L-E
RF FETs PD54008L-E
STMicroelectronics
PD54008L-E
--
Diodes, Transistors and Thyristors
RF FETs
PD54008L-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count14
AutomotiveNo
PCB changed14
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Quad Gate Quad Source
Package Width5
Package Height0.88
Package Length5
Output Power (W)8(Min)
Supplier PackagePower Flat
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Typical Power Gain (dB)15(Min)
Number of Elements per Chip1
Typical Drain Efficiency (%)50(Min)
Maximum Power Dissipation (mW)26700
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)5
Typical Input Capacitance @ Vds (pF)80@7.5V
Typical Output Capacitance @ Vds (pF)60@7.5V
Typical Reverse Transfer Capacitance @ Vds (pF)6.6@7.5V
Description
Trans RF FET N-CH 25V 5A 14-Pin Power Flat T/R
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