Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
Type | MOSFET |
EU RoHS | Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Maximum VSWR | 65 |
Configuration | Single |
Package Width | 4.83(Max) |
Package Height | 8.39(Min) |
Package Length | 10.47(Max) |
Output Power (W) | 115(Typ) |
Supplier Package | TO-220 |
Maximum IDSS (uA) | 10 |
Mode of Operation | CW |
Process Technology | LDMOS |
Maximum Frequency (MHz) | 250 |
Typical Power Gain (dB) | 21.1 |
Number of Elements per Chip | 1 |
Typical Drain Efficiency (%) | 76.7 |
Maximum Power Dissipation (mW) | 182000 |
Maximum Gate Source Voltage (V) | 10 |
Maximum Drain Source Voltage (V) | 133 |
Maximum Gate Threshold Voltage (V) | 2.7 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -40 |
Typical Forward Transconductance (S) | 7.1 |
Typical Input Capacitance @ Vds (pF) | 149@50V |
Typical Output Capacitance @ Vds (pF) | 43.4@50V |
Maximum Gate Source Leakage Current (nA) | 1000 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 0.96@50V |
Description |