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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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PD85025STR-E
PD85025STR-E
RF FETs PD85025STR-E
STMicroelectronics
PD85025STR-E
--
Diodes, Transistors and Thyristors
RF FETs
PD85025STR-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Min)
ConfigurationSingle
Package Width9.4
Package Height3.5
Package Length9.5
Output Power (W)30(Typ)
Supplier PackagePowerSO-10RF (Straight lead)
Process TechnologyLDMOS
Standard Package NamePowerSO-10RF (Straight lead)
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1000
Typical Power Gain (dB)17.3
Number of Elements per Chip1
Typical Drain Efficiency (%)66
Maximum Power Dissipation (mW)79000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)40
Maximum Operating Temperature (°C)165
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)55@12.5V
Typical Output Capacitance @ Vds (pF)40@12.5V
Typical Reverse Transfer Capacitance @ Vds (pF)1.5@12.5V
Description
Trans RF FET N-CH 40V 7A 3-Pin PowerSO-10RF (Straight lead) T/R
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