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RF FETs RF5L05950CF2
STMicroelectronics
RF5L05950CF2
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Diodes, Transistors and Thyristors
RF FETs
RF5L05950CF2.pdf
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width9.78
Package Height3.67
Package Length23.12
Output Power (W)2000(Typ)
Supplier PackageCase C2
Mode of OperationPulsed CW
Maximum Frequency (MHz)500
Typical Power Gain (dB)20
Number of Elements per Chip1
Typical Drain Efficiency (%)76
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)110
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Drain Source Resistance (mOhm)1000@10V
Description
Trans RF MOSFET 110V 3-Pin Case C2 T/R
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