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MMRF1315NR1
MMRF1315NR1
RF FETs MMRF1315NR1
NXP
MMRF1315NR1
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1315NR1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle Dual Source
Package Width6.15(Max)
Package Height2.08(Max)
Package Length9.7(Max)
Output Power (W)60(Typ)
Supplier PackageTO-270
Maximum IDSS (uA)10
Mode of Operation1-Carrier N-CDMA
Process TechnologyLDMOS
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1000
Minimum Frequency (MHz)500
Typical Power Gain (dB)21.1|20
Number of Elements per Chip1
Typical Drain Efficiency (%)33
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)66
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)109@28V
Typical Output Capacitance @ Vds (pF)33@28V
Maximum Gate Source Leakage Current (nA)10000
Typical Reverse Transfer Capacitance @ Vds (pF)1.1@28V
Description
Trans RF FET N-CH 66V 3-Pin TO-270 T/R
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