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PXFC211507SCV1R250XTMA1
PXFC211507SCV1R250XTMA1
RF FETs PXFC211507SCV1R250XTMA1
Infineon
PXFC211507SCV1R250XTMA1
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Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
TypeMOSFET
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Output Power (W)150
Mode of Operation2-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2170
Minimum Frequency (MHz)2110
Typical Power Gain (dB)20.4
Number of Elements per Chip1
Typical Drain Efficiency (%)32.9
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Maximum Drain Source Resistance (MOhm)50(Typ)@10V
Description
Trans RF MOSFET N-CH 65V T/R
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