Product Attribute | Attribute Value |
PPAP | No |
Type | MOSFET |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Maximum VSWR | 10 |
Configuration | Single |
Output Power (W) | 150 |
Mode of Operation | 2-Carrier W-CDMA |
Process Technology | LDMOS |
Maximum Frequency (MHz) | 2170 |
Minimum Frequency (MHz) | 2110 |
Typical Power Gain (dB) | 20.4 |
Number of Elements per Chip | 1 |
Typical Drain Efficiency (%) | 32.9 |
Maximum Gate Source Voltage (V) | 10 |
Maximum Drain Source Voltage (V) | 65 |
Maximum Operating Temperature (°C) | 225 |
Minimum Operating Temperature (°C) | -65 |
Maximum Drain Source Resistance (MOhm) | 50(Typ)@10V |
Description |