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NP110N055PUG-E1-AY
NP110N055PUG-E1-AY
Discrete Semiconductor Products NP110N055PUG-E1-AY
Renesas Electronics
NP110N055PUG-E1-AY
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other
Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusObsolete
Vgs(th) (Max) @ Id4V @ 250µA
Operating Temperature175°C (TJ)
Rds On (Max) @ Id, Vgs2.4mOhm @ 55A, 10V
Power Dissipation (Max)1.8W (Ta), 288W (Tc)
Supplier Device PackageTO-263
Gate Charge (Qg) (Max) @ Vgs380 nC @ 10 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds25700 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Description
MOSFET N-CH 55V 110A TO263
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