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NSV12100XV6T1G
NSV12100XV6T1G
GP BJT NSV12100XV6T1G
onsemi
NSV12100XV6T1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPYes
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
Lead ShapeFlat
PCB changed6
Part StatusActive
ConfigurationSingle Quad Collector
Package Width1.2
Package Height0.55
Package Length1.6
Product CategoryBipolar Small Signal
Supplier PackageSOT-563
Standard Package NameSOT
Minimum DC Current Gain200@10mA@2V|100@500mA@2V|90@1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)12
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.15@0.01A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.04@0.005A@0.05A|0.1@0.002A@0.1A|0.06@0.01A@0.1A|0.44@0.1A@1A|0.225@0.05A@0.5A
Description
Trans GP BJT PNP 12V 1A 500mW Automotive 6-Pin SOT-563 T/R
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