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FP35R12W2T7B11BOMA1
FP35R12W2T7B11BOMA1
IGBT Modules FP35R12W2T7B11BOMA1
Infineon
FP35R12W2T7B11BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count23
AutomotiveNo
TechnologyTrench Stop
PCB changed23
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width48
Package Height12
Package Length56.7
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)35
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Module N-CH 1200V 35A 23-Pin Tray
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