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IPB70N10S312ATMA1
IPB70N10S312ATMA1
MOSFETs IPB70N10S312ATMA1
Infineon
IPB70N10S312ATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)8
Typical Rise Time (ns)8
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Typical Gate Charge @ 10V (nC)51
Typical Gate Charge @ Vgs (nC)51@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)25
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)70
Typical Input Capacitance @ Vds (pF)3350@25V
Maximum Drain Source Resistance (MOhm)11.3@10V
Maximum Pulsed Drain Current @ TC=25°C (A)280
Description
Trans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
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