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IPD042P03L3GATMA1
IPD042P03L3GATMA1
MOSFETs IPD042P03L3GATMA1
Infineon
IPD042P03L3GATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Supplier PackageDPAK
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Maximum Drain Source Voltage (V)30
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)70
Maximum Drain Source Resistance (MOhm)4.2@10V
Maximum Pulsed Drain Current @ TC=25°C (A)280
Description
OptiMOS P3 Power-Transistor
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