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MOSFETs IPI80P03P4-05
Infineon
IPI80P03P4-05
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Product Category | Power MOSFET |
| Process Technology | OptiMOS |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 10 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 137000 |
| Typical Gate Charge @ 10V (nC) | 100 |
| Typical Gate Charge @ Vgs (nC) | 100@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 35 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 70 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 80 |
| Typical Input Capacitance @ Vds (pF) | 7900@25V |
| Maximum Drain Source Resistance (mOhm) | 5@10V |
| Description |
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