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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NVLJD4007NZTBG
NVLJD4007NZTBG
MOSFETs NVLJD4007NZTBG
onsemi
NVLJD4007NZTBG
--
Diodes, Transistors and Thyristors
MOSFETs
NVLJD4007NZTBG.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
Lead ShapeNo Lead
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width2
Package Height0.75(Max)
Package Length2
Product CategorySmall Signal
Supplier PackageWDFN EP
Maximum IDSS (uA)1
Standard Package NameDFN
Typical Fall Time (ns)72
Typical Rise Time (ns)41
Number of Elements per Chip2
Maximum Power Dissipation (mW)755
Typical Gate Charge @ Vgs (nC)0.75@4.5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)96
Maximum Gate Threshold Voltage (V)1.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.245
Typical Input Capacitance @ Vds (pF)12.2@5V
Maximum Drain Source Resistance (MOhm)7000@4.5V
Maximum Gate Source Leakage Current (nA)25000
Description
Trans MOSFET N-CH 30V 0.245A Automotive 6-Pin WDFN EP T/R
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