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MOSFETs NXH010P120MNF1PTNG
onsemi
NXH010P120MNF1PTNG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| Material | SiC |
| ECCN (US) | EAR99 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 9.8 |
| Typical Rise Time (ns) | 16.2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 250000 |
| Typical Gate Charge @ Vgs (nC) | 454@20V |
| Maximum Gate Source Voltage (V) | 25 |
| Typical Turn-On Delay Time (ns) | 44.2 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 136.6 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 114 |
| Operating Junction Temperature (°C) | -40 to 175 |
| Typical Input Capacitance @ Vds (pF) | 4707@800V |
| Maximum Drain Source Resistance (mOhm) | 14@20V |
| Description |
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