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RFD16N05SM
RFD16N05SM
MOSFETs RFD16N05SM
onsemi
RFD16N05SM
--
Diodes, Transistors and Thyristors
MOSFETs
RFD16N05SM.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyMegaFET
Standard Package NameTO-252
Typical Fall Time (ns)30
Typical Rise Time (ns)30
Number of Elements per Chip1
Maximum Power Dissipation (mW)72000
Typical Gate Charge @ Vgs (nC)80(Max)@20V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)50
Typical Turn-Off Delay Time (ns)55
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)900@25V
Maximum Drain Source Resistance (mOhm)47@10V
Description
Trans MOSFET N-CH Si 50V 16A 3-Pin(2+Tab) DPAK Rail
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