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SI1469DH-T1-E3
SI1469DH-T1-E3
MOSFETs SI1469DH-T1-E3
Vishay
SI1469DH-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.25
Package Height1(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-70
Process TechnologyTrenchFET
Standard Package NameSOT
Typical Fall Time (ns)9|15
Typical Rise Time (ns)48|20
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)5.5@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)105
Typical Turn-On Delay Time (ns)27|5
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)27|22
Typical Gate to Drain Charge (nC)1.7
Maximum Gate Threshold Voltage (V)1.5
Typical Gate to Source Charge (nC)0.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.2
Typical Input Capacitance @ Vds (pF)470@10V
Typical Reverse Recovery Charge (nC)8
Maximum Drain Source Resistance (MOhm)80@10V
Description
Trans MOSFET P-CH 20V 3.2A 6-Pin SC-70 T/R
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