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QSD124
QSD124
Phototransistors QSD124
onsemi
QSD124
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Optoelectronics
Phototransistors
QSD124.pdf
Specification
Product AttributeAttribute Value
HTS8541497080
PPAPNo
TypeIR Chip
EU RoHSCompliant
Diameter6.1(Max)
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingBag
Pin Count2
AutomotiveNo
Lead ShapeThrough Hole
Lens ColorBlack Transparent
PCB changed2
Part StatusActive
Cut-Off FilterVisible Cut-off
Package Height8.77
Lens Shape TypeDomed
Supplier PackageT-1 3/4
Viewing OrientationTop View
Peak Wavelength (nm)880
Phototransistor TypePhototransistor
Standard Package NameT-1 3/4
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)7000(Typ)
Maximum Rise Time (ns)7000(Typ)
Maximum Dark Current (nA)100
Maximum Light Current (uA)6000(Min)
Number of Channels per Chip1
Maximum Collector Current (mA)25
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)12
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4 Bag
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