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QSD122
QSD122
Phototransistors QSD122
onsemi
QSD122
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Optoelectronics
Phototransistors
QSD122.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeIR Chip
EU RoHSCompliant
Diameter6.1(Max)
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingBulk
Pin Count2
AutomotiveNo
Lead ShapeThrough Hole
Lens ColorBlack Transparent
PCB changed2
Part StatusObsolete
Cut-Off FilterVisible Cut-off
Package Height8.77
Lens Shape TypeDomed
Supplier PackageT-1 3/4
Viewing OrientationTop View
Peak Wavelength (nm)880
Phototransistor TypePhototransistor
Standard Package NameT-1 3/4
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)7000(Typ)
Maximum Rise Time (ns)7000(Typ)
Maximum Dark Current (nA)100
Maximum Light Current (uA)6000
Number of Channels per Chip1
Maximum Collector Current (mA)25
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)12
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4 Bulk
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