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QSE113
QSE113
Phototransistors QSE113
onsemi
QSE113
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Optoelectronics
Phototransistors
QSE113.pdf
Specification
Product AttributeAttribute Value
HTS8541497080
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingBag
Pin Count2
AutomotiveNo
Lens ColorBlack Transparent
PCB changed2
Part StatusActive
Package Width2.54
Cut-Off FilterVisible Cut-off
Package Height5.08
Package Length4.44
Lens Shape TypeDomed
Supplier PackageSide Looker
Viewing OrientationSide View
Peak Wavelength (nm)880
Phototransistor TypePhototransistor
Standard Package NameSide Looker
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)8000(Typ)
Maximum Rise Time (ns)8000(Typ)
Maximum Dark Current (nA)100
Maximum Light Current (uA)1500
Number of Channels per Chip1
Maximum Collector Current (mA)5
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)25
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
Phototransistor IR Chip Silicon 880nm 2-Pin Side Looker Bag
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