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QSB320FTR
QSB320FTR
Phototransistors QSB320FTR
onsemi
QSB320FTR
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Optoelectronics
Phototransistors
QSB320FTR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
MountingSurface Mount
PolarityNPN
ECCN (US)EAR99
PackagingTape and Reel
Pin Count2
AutomotiveNo
Lead ShapeJ-Lead
PCB changed2
Part StatusObsolete
Package Width3(Max)
Cut-Off FilterVisible Cut-off
Package Height2.1(Max)
Package Length3.4(Max)
Lens Shape TypeFlat
Supplier PackagePLCC
Viewing OrientationTop View
Peak Wavelength (nm)880
Phototransistor TypePhototransistor
Standard Package NameLCC
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)8000(Typ)
Maximum Rise Time (ns)8000(Typ)
Maximum Dark Current (nA)200
Maximum Light Current (uA)16
Number of Channels per Chip1
Maximum Collector Current (mA)15
Maximum Power Dissipation (mW)165
Half Intensity Angle Degrees (°)120
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)35
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.3
Description
Phototransistor IR Chip Silicon 880nm 2-Pin PLCC T/R
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