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BFG325W/XR,115
BFG325W/XR,115
RF BJT BFG325W/XR,115
NXP
BFG325W/XR,115
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.35(Max)
Package Height1(Max)
Package Length2.2(Max)
Supplier PackageCMPAK
Standard Package NameCMPAK
Minimum DC Current Gain60@15mA@3V
Typical Power Gain (dB)18.3
Maximum Noise Figure (dB)1.1(Typ)
Number of Elements per Chip1
Operational Bias Conditions3V/15mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)210
Maximum DC Collector Current (A)0.035
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)15
Maximum Transition Frequency (MHz)14000(Typ)
Maximum Operating Temperature (°C)175
Maximum Power 1dB Compression (dBm)8.7(Typ)
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)6
Maximum Collector Cut-Off Current (nA)15
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)19.4(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 6V 0.035A 210mW 4-Pin(3+Tab) CMPAK T/R
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