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BFR193FE6327
BFR193FE6327
RF BJT BFR193FE6327
Infineon
BFR193FE6327
--
Diodes, Transistors and Thyristors
RF BJT
BFR193FE6327.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeFlat
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width0.8
Package Height0.55
Package Length1.2
Supplier PackageTSFP
Standard Package NameTSFP
Minimum DC Current Gain70@30mA@8V
Typical Power Gain (dB)15
Maximum Noise Figure (dB)1.6(Min)
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Operational Bias Conditions8V/30mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)580
Typical Input Capacitance (pF)2.25
Typical Output Capacitance (pF)0.66
Maximum DC Collector Current (A)0.08
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)1000
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.08A 580mW Automotive 3-Pin TSFP T/R
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