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MMBTH81
MMBTH81
RF BJT MMBTH81
onsemi
MMBTH81
--
Diodes, Transistors and Thyristors
RF BJT
MMBTH81.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain60@5mA@10V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)225
Typical Input Capacitance (pF)0.65(Max)
Typical Output Capacitance (pF)0.85(Max)
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)600(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)20
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Junction Case Thermal Resistance125°C/W
Maximum Collector-Emitter Voltage Range (V)20 to 30
Maximum Junction Ambient Thermal Resistance556°C/W
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.5mA@5mA
Description
Trans RF BJT PNP 20V 0.05A 225mW 3-Pin SOT-23 T/R
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