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NSVF6003SB6T1G
NSVF6003SB6T1G
RF BJT NSVF6003SB6T1G
onsemi
NSVF6003SB6T1G
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
ConfigurationSingle Quad Collector
Package Width1.6
Package Height0.9
Package Length2.9
Supplier PackageCPH
Minimum DC Current Gain100@50mA@5V
Maximum Noise Figure (dB)3
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Operational Bias Conditions5V/50mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)800
Typical Output Capacitance (pF)1.3
Maximum DC Collector Current (A)0.15
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)7000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)10000
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)1000
Maximum DC Collector Current Range (A)0.12 to 0.5
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.15A 800mW Automotive 6-Pin CPH T/R
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