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SD1726
SD1726
RF BJT SD1726
STMicroelectronics
SD1726
--
Diodes, Transistors and Thyristors
RF BJT
SD1726.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count4
AutomotiveNo
PCB changed4
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width12.83(Max)
Package Height7.11(Max)
Package Length24.89(Max)
Output Power (W)150(Min)
Supplier PackageCase M-174
Minimum DC Current Gain18@1.4A@6V
Typical Power Gain (dB)14(Min)
Number of Elements per Chip1
Operational Bias Conditions50V/100mA
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)318000
Maximum DC Collector Current (A)20
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)110
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)55
Maximum DC Collector Current Range (A)8 to 100
Maximum Junction Case Thermal Resistance0.75°C/W
Maximum Collector-Emitter Voltage Range (V)50 to 60
Description
Trans RF BJT NPN 55V 20A 318000mW 4-Pin Case M-174 Loose
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