Welcome to BEAM! Tel: +86-553-5896615
Language: Help
A3T18H408W24SR3
A3T18H408W24SR3
RF FETs A3T18H408W24SR3
NXP
A3T18H408W24SR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
TypeMOSFET
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Output Power (W)56(Typ)
Maximum IDSS (uA)5
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)1880
Minimum Frequency (MHz)1805
Typical Power Gain (dB)15.2
Typical Drain Efficiency (%)50.9
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF FET N-CH 65V T/R
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13846
Manufacturer: Microchip Technology
Inventory: 0
$0.69698
Manufacturer: Microchip Technology
Inventory: 0
$0.22023
Manufacturer: STMicroelectronics
Inventory: 0
$0.43666
Manufacturer: Texas Instruments
Inventory: 3000
$3.37536
Manufacturer: Texas Instruments
Inventory: 0
$0.0256
Manufacturer: Texas Instruments
Inventory: 3000
$1.32283
Manufacturer: Texas Instruments
Inventory: 6000
$1.0668
Manufacturer: STMicroelectronics
Inventory: 1920
$3.52044
Manufacturer: ADI
Inventory: 0
$1.40688