Product Attribute | Attribute Value |
PPAP | No |
Type | MOSFET |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Output Power (W) | 56(Typ) |
Maximum IDSS (uA) | 5 |
Mode of Operation | 1-Carrier W-CDMA |
Process Technology | LDMOS |
Maximum Frequency (MHz) | 1880 |
Minimum Frequency (MHz) | 1805 |
Typical Power Gain (dB) | 15.2 |
Typical Drain Efficiency (%) | 50.9 |
Maximum Gate Source Voltage (V) | 10 |
Maximum Drain Source Voltage (V) | 65 |
Maximum Gate Threshold Voltage (V) | 2.3 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -40 |
Maximum Gate Source Leakage Current (nA) | 1000 |
Description |