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A3T18H408W24SR3
A3T18H408W24SR3
RF FETs A3T18H408W24SR3
NXP
A3T18H408W24SR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
TypeMOSFET
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Output Power (W)56(Typ)
Maximum IDSS (uA)5
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)1880
Minimum Frequency (MHz)1805
Typical Power Gain (dB)15.2
Typical Drain Efficiency (%)50.9
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF FET N-CH 65V T/R
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