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MRF8P20165WHSR3
MRF8P20165WHSR3
RF FETs MRF8P20165WHSR3
NXP
MRF8P20165WHSR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width9.91(Max)
Package Height4.32(Max)
Package Length20.7(Max)
Output Power (W)37(Typ)
Supplier PackageCase 465H-02
Mode of Operation1-Carrier W-CDMA
Maximum Frequency (MHz)2025
Minimum Frequency (MHz)1880
Typical Power Gain (dB)14.8
Number of Elements per Chip2
Typical Drain Efficiency (%)44.3
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Description
Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R
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