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AFT05MS006NT1
AFT05MS006NT1
RF FETs AFT05MS006NT1
NXP
AFT05MS006NT1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationDual Common Source
Package Width5.97(Max)
Package Height1.83(Max)
Package Length6.73(Max)
Output Power (W)6(Typ)
Supplier PackagePLD-1.5W
Maximum IDSS (uA)10
Process TechnologyLDMOS
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)941
Minimum Frequency (MHz)136
Typical Power Gain (dB)18.3
Number of Elements per Chip2
Typical Drain Efficiency (%)73
Maximum Power Dissipation (mW)125000
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)30
Maximum Gate Threshold Voltage (V)2.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)4.4
Typical Input Capacitance @ Vds (pF)75@7.5V
Typical Output Capacitance @ Vds (pF)47@7.5V
Maximum Gate Source Leakage Current (nA)600
Typical Reverse Transfer Capacitance @ Vds (pF)1.7@7.5V
Description
Trans RF FET N-CH 30V 3-Pin PLD-1.5W T/R
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