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SD56120
SD56120
RF FETs SD56120
STMicroelectronics
SD56120
--
Diodes, Transistors and Thyristors
RF FETs
SD56120.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5(Min)
ConfigurationDual Common Source
Package Width5.97
Package Height5.08
Package Length29.08
Output Power (W)100(Min)
Supplier PackageCase M-246
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Minimum Frequency (MHz)470
Typical Power Gain (dB)16
Number of Elements per Chip2
Typical Drain Efficiency (%)60
Maximum Power Dissipation (mW)217000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)14
Typical Forward Transconductance (S)3
Typical Input Capacitance @ Vds (pF)82@28V
Typical Output Capacitance @ Vds (pF)48@28V
Typical Reverse Transfer Capacitance @ Vds (pF)2.8@28V
Description
Trans RF FET N-CH 65V 14A 5-Pin Case M-246 Loose
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