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BLF6G20-45
BLF6G20-45
RF FETs BLF6G20-45
NXP
BLF6G20-45
--
Diodes, Transistors and Thyristors
RF FETs
BLF6G20-45.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count3
AutomotiveUnknown
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width10.29(Max)
Package Height4.62(Max)
Package Length20.45(Max)
Output Power (W)2.5(Typ)
Supplier PackageCDFM
Mode of Operation2-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2000
Minimum Frequency (MHz)1800
Typical Power Gain (dB)19.2
Number of Elements per Chip1
Typical Drain Efficiency (%)14
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)13
Typical Forward Transconductance (S)5
Maximum Drain Source Resistance (mOhm)200(Typ)@6.15V
Description
Trans RF MOSFET N-CH 65V 13A 3-Pin CDFM
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