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BLF7G10LS-250
BLF7G10LS-250
RF FETs BLF7G10LS-250
NXP
BLF7G10LS-250
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveUnknown
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.72(Max)
Package Length20.7(Max)
Output Power (W)60(Typ)
Supplier PackageSOT-502B
Mode of Operation2-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)960
Minimum Frequency (MHz)869
Typical Power Gain (dB)19.5
Number of Elements per Chip1
Typical Drain Efficiency (%)30.5
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)56
Typical Forward Transconductance (S)22
Maximum Drain Source Resistance (MOhm)57(Typ)@6.05V
Description
Trans RF MOSFET N-CH 65V 56A 3-Pin SOT-502B
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