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BLP10H610AZ
BLP10H610AZ
RF FETs BLP10H610AZ
NXP
BLP10H610AZ
--
Diodes, Transistors and Thyristors
RF FETs
BLP10H610AZ.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count12
PCB changed12
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Common Source
Package Width5
Package Height0.82
Package Length6
Output Power (W)20(Typ)
Supplier PackageHVSON EP
Maximum IDSS (uA)1.2
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)1400
Minimum Frequency (MHz)10
Typical Power Gain (dB)22
Number of Elements per Chip2
Typical Drain Efficiency (%)58(Max)
Maximum Gate Source Voltage (V)11
Maximum Drain Source Voltage (V)104
Maximum Gate Threshold Voltage (V)1.8(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Drain Source Resistance (mOhm)2300(Typ)@6V
Maximum Gate Source Leakage Current (nA)120
Description
Trans RF FET N-CH 104V 12-Pin HVSON EP T/R
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