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BLF988S,112
BLF988S,112
RF FETs BLF988S,112
NXP
BLF988S,112
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Diodes, Transistors and Thyristors
RF FETs
BLF988S,112.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingBulk
Pin Count5
AutomotiveUnknown
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR40
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height4.7(Max)
Package Length32.39(Max)
Output Power (W)250(Min)
Supplier PackageSOT-539B
Maximum IDSS (uA)2.8
Mode of OperationPulsed RF Class-AB|2-Tone Class-AB
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Minimum Frequency (MHz)500
Typical Power Gain (dB)20.8
Number of Elements per Chip2
Typical Drain Efficiency (%)46
Maximum Gate Source Voltage (V)11
Maximum Drain Source Voltage (V)110
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)220@50V
Typical Output Capacitance @ Vds (pF)74@50V
Maximum Drain Source Resistance (mOhm)143(Typ)@6.15V
Maximum Gate Source Leakage Current (nA)280
Typical Reverse Transfer Capacitance @ Vds (pF)1.2@50V
Description
Trans RF FET N-CH 110V 5-Pin SOT-539B Bulk
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