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MHT1003NR3
MHT1003NR3
RF FETs MHT1003NR3
NXP
MHT1003NR3
--
Diodes, Transistors and Thyristors
RF FETs
MHT1003NR3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeMOSFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
Package Width10.01(Max)
Package Height3.86(Max)
Package Length20.62(Max)
Output Power (W)250(Typ)
Supplier PackageOM-780 EP
Maximum IDSS (uA)10
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)2500
Minimum Frequency (MHz)2400
Typical Power Gain (dB)15.9
Maximum Power Dissipation (mW)769000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)1.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF FET N-CH 65V 3-Pin OM-780 EP T/R
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