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MMBFJ310LT3G
MMBFJ310LT3G
RF FETs MMBFJ310LT3G
onsemi
MMBFJ310LT3G
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Diodes, Transistors and Thyristors
RF FETs
MMBFJ310LT3G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeJFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Supplier PackageSOT-23
Maximum IDSS (uA)60000
Standard Package NameSOT
Number of Elements per Chip1
Maximum Power Dissipation (mW)225
Maximum Gate Source Voltage (V)25
Maximum Drain Source Voltage (V)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Forward Transconductance (S)0.018(Max)
Typical Input Capacitance @ Vds (pF)5(Max)@0V
Maximum Gate Source Leakage Current (nA)1
Typical Reverse Transfer Capacitance @ Vds (pF)2.5(Max)@0V
Description
RF Power Field Effect Transistor
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