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RF FETs MRF101AN-13MHZ
NXP
MRF101AN-13MHZ
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| Type | MOSFET |
| EU RoHS | Not Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 65 |
| Configuration | Single |
| Package Width | 4.83(Max) |
| Package Height | 8.39(Min) |
| Package Length | 10.47(Max) |
| Output Power (W) | 115(Typ) |
| Supplier Package | TO-220 |
| Maximum IDSS (uA) | 10 |
| Mode of Operation | CW |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 250 |
| Minimum Frequency (MHz) | 1.8 |
| Typical Power Gain (dB) | 21.1 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 76.7 |
| Maximum Power Dissipation (mW) | 182000 |
| Maximum Gate Source Voltage (V) | 10 |
| Maximum Drain Source Voltage (V) | 133 |
| Maximum Gate Threshold Voltage (V) | 2.7 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Typical Forward Transconductance (S) | 7.1 |
| Typical Input Capacitance @ Vds (pF) | 149@50V |
| Typical Output Capacitance @ Vds (pF) | 43.4@50V |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 0.96@50V |
| Description |
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