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MRF13750HR5
MRF13750HR5
RF FETs MRF13750HR5
NXP
MRF13750HR5
--
Diodes, Transistors and Thyristors
RF FETs
MRF13750HR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeMOSFET
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
Package Width10.29(Max)
Package Height4.83(Max)
Package Length41.28(Max)
Output Power (W)850(Typ)
Supplier PackageCFM
Maximum IDSS (uA)10
Process TechnologyLDMOS
Maximum Frequency (MHz)1300
Minimum Frequency (MHz)700
Typical Power Gain (dB)20.4
Typical Drain Efficiency (%)69.2
Maximum Power Dissipation (mW)1333000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)105
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Output Capacitance @ Vds (pF)63.8@50V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)1.94@50V
Description
Trans RF MOSFET N-CH 105V 4-Pin CFM T/R
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