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MRF6VP11KHR5
MRF6VP11KHR5
RF FETs MRF6VP11KHR5
NXP
MRF6VP11KHR5
--
Diodes, Transistors and Thyristors
RF FETs
MRF6VP11KHR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height5.08(Max)
Package Length41.28(Max)
Output Power (W)1000(Typ)
Supplier PackageNI-1230
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)150
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)26
Number of Elements per Chip2
Typical Drain Efficiency (%)71
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)110
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)506@50V
Typical Output Capacitance @ Vds (pF)147@50V
Typical Reverse Transfer Capacitance @ Vds (pF)3.3@50V
Description
Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
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