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RF FETs MRFE6S9060GNR1
NXP
MRFE6S9060GNR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | MOSFET |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Single |
| Output Power (W) | 14(Typ) |
| Mode of Operation | GSM EDGE|CW|1-Carrier N-CDMA |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 1000 |
| Minimum Frequency (MHz) | 470 |
| Typical Power Gain (dB) | 20|21.1 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 33 |
| Maximum Gate Source Voltage (V) | 12 |
| Maximum Drain Source Voltage (V) | 66 |
| Maximum Operating Temperature (°C) | 225 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Input Capacitance @ Vds (pF) | 109@28V |
| Typical Output Capacitance @ Vds (pF) | 33@28V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 1.1@28V |
| Description |
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