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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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PXAC261002FCV1XWSA1
PXAC261002FCV1XWSA1
RF FETs PXAC261002FCV1XWSA1
Infineon
PXAC261002FCV1XWSA1
--
Diodes, Transistors and Thyristors
RF FETs
PXAC261002FCV1XWSA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width9.78
Package Height3.76
Package Length20.57
Output Power (W)100
Supplier PackageCase H-37248
Maximum IDSS (uA)10
Mode of Operation2-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2690
Minimum Frequency (MHz)2490
Typical Power Gain (dB)15.1
Number of Elements per Chip2
Typical Drain Efficiency (%)49
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Maximum Drain Source Resistance (MOhm)300(Typ)@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 65V 5-Pin Case H-37248 Tray
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