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RF FETs BLC8G27LS-100AVJ
NXP
BLC8G27LS-100AVJ
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 7 |
| PCB changed | 7 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Common Source |
| Package Width | 9.91(Max) |
| Package Height | 4.01(Max) |
| Package Length | 20.7(Max) |
| Output Power (W) | 17(Typ) |
| Supplier Package | DFM |
| Mode of Operation | 1-Carrier W-CDMA |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 2690 |
| Minimum Frequency (MHz) | 2496 |
| Typical Power Gain (dB) | 15.5 |
| Number of Elements per Chip | 2 |
| Typical Drain Efficiency (%) | 45 |
| Maximum Gate Source Voltage (V) | 13 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Operating Temperature (°C) | 225 |
| Minimum Operating Temperature (°C) | -65 |
| Description |
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