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FF450R12KE4EHOSA1
FF450R12KE4EHOSA1
IGBT Modules FF450R12KE4EHOSA1
Infineon
FF450R12KE4EHOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveNo
TechnologyField Stop|Trench
PCB changed7
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width61.4
Package Height30.9
Package Length106.4
Supplier Package62MM-1
Maximum Power Dissipation (mW)2400000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)520
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray
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